kw.\*:("GALLIUM COMPOSE")
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FURTHER STUDIES ON POLYTYPISM IN GASE.TERHELL JCJM; VAN DER VLEUTEN WC.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 101-106; BIBL. 7 REF.Article
PREFERENTIAL INTERACTION OF CHANNELLED PARTICLES IN DIATOMIC CRYSTALS.BONTEMPS A; FONTENILLE J; GUIVARC'H A et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 55; NO 6; PP. 373-374; BIBL. 7 REF.Article
REFINEMENT OF THE 2H GAS BETA -TYPE.KUHN A; CHEVY A.1976; ACTA CRYSTALLOGR., BETA; DANEM.; DA. 1976; VOL. 32; NO 3; PP. 983-984; BIBL. 10 REF.Article
SEMICONDUCTOR SURFACE RECONSTRUCTION: THE RIPPLED GEOMETRY OF GAAS (110).LUBINSKY AR; DUKE CB; LEE BW et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 17; PP. 1058-1061; BIBL. 19 REF.Article
COMPUTER CALCULATIONS OF THE CHEMICAL TRANSPORT OF GASE IN CLOSED TUBES.NISHINAGA T; LIETH RMA; VAN EGMOND GE et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 11; PP. 1659-1663; BIBL. 11 REF.Article
HIGH-ORDER MULTIPLE DIFFRACTION IN GAAS.CHANG SL; POST B.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 6; PP. 832-835; BIBL. 9 REF.Article
THE MEASUREMENT OF ANOMALOUS SCATTERING FACTORS NEAR THE GAK ABSORPTION EDGE IN GAP.FUKAMACHI T; HOSOYA S.1975; ACTA CRYSTALLOGR., A; DANEM.; DA. 1975; VOL. 31; NO 2; PP. 215-220; BIBL. 17 REF.Article
INFLUENCE DU TYPE DES ELEMENTS D'ALLIAGE SUR LA PROFONDEUR DE LA COUCHE PERTURBEE DANS L'ARSENIURE DE GALLIUMNIKOLAENYA AZ; TONOYAN AA; SEMENENYA LA et al.1975; FIZ. KHIM. OBRABET. MATER.; S.S.S.R.; DA. 1975; NO 2; PP. 95-97; BIBL. 7 REF.Article
LA COUCHE DE PASSAGE DANS LES STRUCTURES AUTOEPITAXIQUESLAVRENT'EVA LG; VILISOVA MD.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 58-77; BIBL. 1 P. 1/2Article
HEAT CYCLING OF UN-PASSIVATED GAAS SURFACES.MORGAN DV; WOOD DR.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. 325-330; ABS. ALLEM.; BIBL. 7 REF.Article
COMPORTEMENT DU TELLURE DANS GAP DANS LE PROCEDE DE FUSION DE ZONE HORIZONTALESHCHEGOLEVA VF; MARINA LI; NASHEL'SKIJ A YA et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 8; PP. 1406-1408; BIBL. 5 REF.Article
ZUM KONTRAST BEI ROENTGENTOPOGRAPHISCHEN AUFNAHMEN VON EINKRISTALLINEM GAAS. = LE CONTRASTE DES CLICHES DE GAAS MONOCRISTALLIN EN TOPOGRAPHIE DE RAYONS XRICHTER H; JEGERLEHNER K; MOHR U et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 4; PP. 405-412; ABS. ANGL.; BIBL. 16 REF.Article
GALLIUM AND INDIUM. ANNUAL SURVEY COVERING THE YEAR 1976.TANAKA T.1978; J. ORGANOMETAL. CHEM.; SWITZ.; DA. 1978; VOL. 147; PP. 183-191; BIBL. 24 REF.Article
CARACTERISTIQUES ET APPLICATIONS DES PLUS MARQUANTES DU GALLIUM ET DE SES COMPOSES.DE LA BRETEQUE P.1976; INDUSTR. NATION.; FR.; DA. 1976; NO 3; PP. 3-28; BIBL. 29 REF.Article
DEGRADATION OF GALLIUM ARSENIDE CRYSTALS BY THE COLD-WORKING TREATMENT (ABRASION).OTSUBA M; MIKI H; SHIRAHATA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 6; PP. 849-854; BIBL. 12 REF.Article
SYNTHESIS OF ALKYLGALLIUM DIISWILKINSON M; WORRALL IJ.1975; J. ORGANOMETAL. CHEM.; SWITZ.; DA. 1975; VOL. 93; NO 1; PP. 39-42; BIBL. 6 REF.Article
FACTEURS DE STRUCTURE DE L'ARSENIURE DE GALLIUM, DETERMINES D'APRES L'INTENSITE INTEGRALE SUR LES MONOCRISTAUXALYAKHNOVYICH MM; SHMYIDT MP.1975; VESCI AKAD. NAVUK B.S.S.R., FIZ.-MAT. NAVUK; S.S.S.R.; DA. 1975; NO 4; PP. 110-113; ABS. RUSSE; BIBL. 12 REF.Article
OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS.LANG DV; KIMERLING LC.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 8; PP. 489-492; BIBL. 17 REF.Article
SOLID COMPOSITION AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATION ISOBARS FOR GAP.JORDAN AS; CARUSO R; VON NEIDA AR et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3472-3476; BIBL. 23 REF.Article
CARACTERISATION DE L'ASGA IMPLANTE PAR SPECTROSCOPIE "RAMAN" - APPLICATION AUX DIODES ELECTROLUMINESCENTES.BESERMAN; MORHANGE; SEGUIN et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 119-125; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper
CINETIQUE DE LA CROISSANCE DES COUCHES EPITAXIQUES DE PHOSPHURE DE GALLIUM DANS LA ZONE DE RECRISTALLISATION A GRADIENT DE TEMPERATURELOZOVSKIJ VN; MAR'EV VB.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; VOL. 17; NO 7; PP. 115-118; BIBL. 8 REF.Article
AN ELECTRON MICROSCOPY STUDY OF THE EFFECTS OF ANNEALING ON THE DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM ARSENIDE.NARAYANAN GH; KACHARE AH.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 26; NO 2; PP. 657-669; ABS. RES. ALLEM.; BIBL. 21 REF.Article
GALLIUM AND INDIUM: ANNUAL SURVEY COVERING THE YEAR 1979TANAKA T.1981; J. ORGANOMET. CHEM.; ISSN 0022-328X; CHE; DA. 1981; VOL. 207; PP. 111-120; BIBL. 28 REF.Article
THERMOCHEMICAL ANALYSES AND OPTIMUM CONDITIONS FOR VAPOR EPITAXY OF GAAS1-XPX(0.7<X<0.9).TAO YUAN WU.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 778-780; BIBL. 16 REF.Article
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS.RAJARAM BHAT; JAYANT BALIGA B; GHANDHI SK et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 10; PP. 1378-1382; BIBL. 9 REF.Article